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| PRELIMINARY DATA SHEET NPN SILICON TRANSISTOR NE856M13 FEATURES * NEW MINIATURE M13 PACKAGE: - Small transistor outline - 1.0 X 0.5 X 0.5 mm - Low profile / 0.50 mm package height - Flat lead style for better RF performance LOW NOISE FIGURE: NF = 1.4 dB at 1 GHz HIGH COLLECTOR CURRENT: IC MAX = 100 mA OUTLINE DIMENSIONS (Units in mm) PACKAGE OUTLINE M13 +0.1 0.5 -0.05 +0.1 0.15 -0.05 1 0.35 0.3 2 * * XX 1 +0.1 1.0 -0.05 3 0.7 0.35 2 +0.1 0.15 -0.05 0.2 3 +0.1 0.2 -0.05 DESCRIPTION The NE856M13 transistor is designed for low cost amplifier and oscillator applications. Low noise figure, high gain and high current capability equate to wide dynamic range and excellent linearity. NEC's new low profile/flat lead style "M13" package is ideal for today's portable wireless applications. The NE856 is also available in chip, Micro-x, and eight different low cost plastic surface mount package styles. 0.1 0.1 0.2 0.50.05 +0.1 0.125 -0.05 Bottom View PIN CONNECTIONS 1. Emitter 2. Base 3. Collector ELECTRICAL CHARACTERISTICS (TA = 25C) PART NUMBER EIAJ1 REGISTERED NUMBER PACKAGE OUTLINE SYMBOLS fT NF |S21E|2 hFE2 ICBO IEBO CRE3 PARAMETERS AND CONDITIONS Gain Bandwidth at VCE = 3 V, IC = 7 mA, f = 1 GHz Noise Figure at VCE = 3 V, IC = 7 mA, f = 1 GHz Insertion Power Gain at VCE = 3 V, IC = 7 mA, f = 1 GHz Forward Current Gain at VCE = 3 V, IC = 7 mA Collector Cutoff Current at VCB = 10 V, IE = 0 Emitter Cutoff Current at VEB = 1 V, IC = 0 Feedback Capacitance at VCB = 3 V, IE = 0, f = 1 MHz A A pF 0.7 UNITS GHz dB dB 7 80 MIN 3 NE856M13 2SC5614 M13 TYP 4.5 1.4 10 145 1 1 1.5 2.5 MAX Notes: 1. Electronic Industrial Association of Japan. 2. Pulsed measurement, pulse width 350 s, duty cycle 2 %. 3. Capacitance is measured with emitter and case connected to the guard terminal at the bridge. California Eastern Laboratories NE856M13 ABSOLUTE MAXIMUM RATINGS1 (TA = 25C) SYMBOLS VCBO VCEO VEBO IC PT2 TJ TSTG PARAMETERS Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature UNITS V V V mA mW C C RATINGS 20 12 3 100 140 150 -65 to +150 Notes: 1. Operation in excess of any one of these parameters may result in permanent damage. 2. With device mounted on 1.08 cm2 X 1.2 mm glass epoxy board. TYPICAL PERFORMANCE CURVES (TA = 25C) COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE 100 500 VCE = 10 V FORWARD CURRENT GAIN vs. COLLECTOR CURRENT DC Forward Current Gain, hFE 2 4 6 8 10 12 300 200 Collector Current, IC (mA) 80 60 100 70 50 30 20 40 20 10 0 1 2 3 5 7 10 20 30 50 Collector to Emitter Voltage, VCE (V) Collector Current, IC (mA) EXCLUSIVE NORTH AMERICAN AGENT FOR RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS CALIFORNIA EASTERN LABORATORIES * Headquarters * 4590 Patrick Henry Drive * Santa Clara, CA 95054-1817 * (408) 988-3500 * Telex 34-6393 * FAX (408) 988-0279 24-Hour Fax-On-Demand: 800-390-3232 (U.S. and Canada only) * Internet: http://WWW.CEL.COM DATA SUBJECT TO CHANGE WITHOUT NOTICE 2/09/2000 |
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